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Coherent Subnanometric Plate Precipitates Formed during Crystallization of As-Sputtered Ti-Ni films

机译:溅射的Ti-Ni薄膜结晶过程中形成的相干亚微米级板状沉淀

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摘要

It is shown by high resolution electron microscopy that coherent plate precipitates with 0.5-1 nm thickness are formed in Ti-rich Ti-Ni thin films when heat treated directly from the sputter-deposited amorphous state near the crystallization temperature. The precipitates are Ti-rich and formed on {100} planes of the B2 matrix phase with perfect coherency. The crystal structure of the precipitate is a body centered tetragonal with the c-axis normal to the habit plane. Owing to the existence of these coherent subnanometric precipitates, the parent phase is greatly strengthened, resulting in very excellent shape memory properties such as 6 % recoverable shape memory strain at the stress level of 300 MPa without any appreciable plastic deformation.
机译:高分辨率电子显微镜显示,当直接从接近结晶温度的溅射沉积非晶态进行热处理时,在富Ti的Ti-Ni薄膜中形成厚度为0.5-1 nm的连贯的板状析出物。沉淀物富含钛,并以完美的相干性在B2基质相的{100}面上形成。沉淀物的晶体结构是一个以四边形为中心的体,其c轴垂直于习惯平面。由于存在这些相干的亚纳米级析出物,母相得到了极大的增强,从而产生了非常出色的形状记忆特性,例如在300 MPa的应力水平下可恢复6%的形状记忆应变,而没有任何明显的塑性变形。

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